Shoot-Through Protection for an IGCT-Based ZVS Resonant DC Transformer

Integrated gate-commutated thyristors (IGCTs) have successfully demonstrated to be well-suited devices for an application in medium-voltage dc transformers based on LLC resonant converter topology. This appli- cation enables unusually high switching frequencies kilohertz range thanks the zero-voltage while maintaining conversion efficiency. Moreover, clamp circuit that is inseparable part of every hard-switched IGCT-based can completely omitted—further lowering complexity and cost. Nevertheless, without circuit, effect shoot through becomes fatal, considering IGCTs a defined mode failure short desaturation practically nonexistent. To prevent through, this letter proposes simple, yet effective, protection method anode-voltage measurement implemented locally IGCT gate unit. The validity solution using custom unit test setup.